SiC and Compound Semiconductor Wafers
Silicon carbide and compound semiconductor substrates
D&X supplies silicon carbide wafers for power device and RF work, alongside gallium arsenide, indium phosphide, gallium nitride and germanium substrates. They suit device development and pilot production in semiconductor and research and development settings, and our semiconductor wafers and substrates page covers the wider range.
Silicon carbide
D&X offers SiC in 4H and 6H polytypes, either N-type conductive or semi-insulating. Grades are set by micropipe density, so the wafer can be matched to the job, from device work to tool set-up. D&X also keeps some SiC in stock, including 200 mm dummy-grade wafers; ask us for the current stock list.
| Grade | Micropipe density |
|---|---|
| Zero MPD | < 1 cm⁻² |
| Production | < 5 cm⁻² |
| Research | < 15 cm⁻² |
| Dummy | < 50 cm⁻² |
| Parameter | Value |
|---|---|
| Polytypes | 4H-N, 6H-N, 4H-SI, 6H-SI |
| Diameter | 150 mm standard; 50.8, 76.2 and 100 mm on request |
| Thickness | 350 ± 25 µm (4H-N), 500 ± 25 µm (4H-SI) |
| Resistivity | 0.015 to 0.028 ohm-cm (4H-N), 0.02 to 0.1 ohm-cm (6H-N) |
Gallium arsenide
GaAs wafers from 50 mm to 150 mm, grown by VGF or LEC, in <100> or <111> orientation, undoped or doped with zinc, silicon or tellurium, at 350, 550 or 625 µm thick.
Indium phosphide
InP wafers at 2″, 3″ and 4″, grown by VGF, undoped or N-type (S or Sn) or P-type (Zn), 350 µm thick at 2″ and 625 µm at 3″ and 4″, polished or etched.
Gallium nitride and germanium
Freestanding GaN substrates grown by HVPE, undoped (N-type), germanium-doped or iron-doped semi-insulating, with a front-surface roughness of 0.2 nm Ra or better. Germanium, indium antimonide and indium arsenide are available with epi-ready surfaces. Ask for sizes.
Key features and benefits
- SiC in 4H and 6H polytypes, conductive and semi-insulating
- Four micropipe density grades, from zero-MPD to dummy
- GaAs from 50 mm to 150 mm, VGF or LEC
- InP at 2″, 3″ and 4″, undoped, N-type or P-type
- HVPE-grown GaN substrates
- Germanium, InSb and InAs with epi-ready surfaces
To discuss a specification or request a quotation, contact us or request a quote.
